# Technology Development Intern, RF GaN (Summer 2027) at GlobalFoundries

- Company: GlobalFoundries
- Company website: https://selfservice.globalfoundries.com
- Type: Startups
- Level: Internship
- Location: USA - Vermont - Essex Junction
- Work setup: On-site
- Posted: 2026-09-28
- Apply by: 2026-11-12
- Apply: https://globalfoundries.wd1.myworkdayjobs.com/en-US/External/job/USA---Vermont---Essex-Junction/Technology-Development-Intern--RF-GaN--Summer-2027-_JR-2604282
- Page: https://www.1752.vc/careers/jobs/globalfoundries-technology-development-intern-rf-gan-summer-2027/

## About the role

Our Interns & Co-ops are our entry-level talent pipeline for GF across the globe. Our goal is to provide students with a meaningful work experience that will equip them with the skills to embark on a career in the fast-paced and growing semiconductor industry after graduation. As an intern at GF, you'll experience one-on-one mentorship, work assignments that prioritize your growth and potential, professional development opportunities, and the chance to network with executives.

## What they're looking for

- Education – Actively pursuing a Masters or Ph. D. in Electrical Engineering or Solid State Physics or related field through an accredited degree program during the time of internship
- A basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing with emphasis on wide band gap materials like the III-N material system
- Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and fabrication
- Must have at least an overall 3.0 GPA and be in good academic standing
- Language Fluency - English (Written & Verbal)
- Ability to work at least 40 hours per week during the internship


Source: 1752vc Careers, https://www.1752.vc/careers/jobs/globalfoundries-technology-development-intern-rf-gan-summer-2027/