# Principal Engineer at Renesas Electronics

- Company: Renesas Electronics
- What the company does: Renesas is one of the top global semiconductor companies in the world. We strive to develop a safer, healthier, greener, and smarter world, and our goal is to make every endpoint intelligent by offering product solutions in the automotive, industrial,...
- Company website: https://www.renesas.com
- Type: Startups
- Level: Principal and up
- Location: Zhubei, TW
- Work setup: On-site
- Posted: 2026-09-07
- Apply by: 2026-10-22
- Apply: https://jobs.smartrecruiters.com/RenesasElectronics/744000147872289
- Page: https://www.1752.vc/careers/jobs/renesas-electronics-principal-engineer/

## About the role

Principal Engineer, GaN Device Engineer , in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path

## What they're looking for

- Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology
- Hands-on experience with characterization techniques and trap analysis: Pulsed I-V (gate-lag and drain-lag), Transient drain current, MOS Interface trap analysis, but not limited as listed
- Proven technical leadership and ability to work effectively across multidisciplinary teams
- Fluent in both English/Chinese
- Business travel is required
- Experience with TCAD simulation such as Sentaurus or Silvaco