fab2 builds the hardware and software needed to make chips, fabs, tools, and components. Backed by Eclipse Ventures.
About the role
Design device architectures and tailor novel transistor structures to meet device specifications Perform electrical characterization (I-V/C-V) on transistors and MOSCAPs across process splits to establish baseline device behavior
What they're looking for
- Ph.D. in Electrical Engineering, Applied Physics, Solid State Physics, or a closely related field
- Rigorous understanding of advanced CMOS/MOSFET device physics and solid-state electronics fundamentals
- Deep experience with semiconductor device measurement (I-V/C-V) and probe station operation
- Strong skills in data analysis and scripting to accelerate testing and learning cycles
- A knack for translating complex device physics concepts clearly to cross-functional partners
More about this role
The fab2 team can build anything. We design all the hardware and software needed to make chips and we make the fabs, tools, and components ourselves.
We're looking for exceptional, hands-on people who can iterate to the limits of what's possible.
fab2 was founded by Sam Zeloof and Jim Keller . Sam is best known for making chips in his garage, and Jim has been a leader in the semiconductor industry for the past 40 years.
The Process Team sits at the heart of our in-house device development, driving the design of each new generation of tools. This is unlike any role at a traditional foundry—we simultaneously develop recipes, apply novel materials, test and characterize our chips, and troubleshoot tools.
About the role
As an Staff R&D Device Engineer at Fab2, you are the vital link bridging process development, electrical test, and integration. You will define initial transistor architectures and drive deep diagnostic analysis. In this hands-on, high-ownership role, your characterization and parameter extraction will contribute to achieving our targets in device performance, scaling, power, cost and production time.
Design device architectures and tailor novel transistor structures...
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