Renesas is one of the top global semiconductor companies in the world. We strive to develop a safer, healthier, greener, and smarter world, and our goal is to make every endpoint intelligent by offering product solutions in the automotive, industrial,...
About the role
Principal Engineer, GaN Device Engineer , in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path
What they're looking for
- Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology
- Hands-on experience with characterization techniques and trap analysis: Pulsed I-V (gate-lag and drain-lag), Transient drain current, MOS Interface trap analysis, but not limited as listed
- Proven technical leadership and ability to work effectively across multidisciplinary teams
- Fluent in both English/Chinese
- Business travel is required
- Experience with TCAD simulation such as Sentaurus or Silvaco
More about this role
Principal Engineer, GaN Device Engineer , in charge of development of Gallium Nitride (GaN) power devices for high-efficiency power conversion. The candidate will possess expertise in GaN device design & physics to drive high performance/robustness technology. In addition, have an in-depth understanding of trapping mechanisms and relevant characterization techniques with hands-on experience. With strong communication skills in cross-functional teams to drive development path
- · Drive technical understanding of GaN device physics, charge trapping mechanisms, and device reliability behavior.
- · Define and evaluate new device architectures to improve performance, robustness, and competitive differentiation.
- · Technical leadership in advanced device characterization, data analysis, and root-cause investigation to drive performance/ yield/ reliability improvement
- · Collaborate with cross-functional teams to guide technology development and accelerate commercialization of GaN products.
[Must]
- Ph.D. is preferred or M.S. in Electrical Engineering or a related field with 10+ years of semiconductor device R&D experience with major focus on GaN technology.
- Hands-on experience with...
Browse similar: Startup jobs