Micron is a global leader in memory and storage, powering AI and compute-intensive applications from cloud to edge with innovative semiconductor solutions.
About the role
As a DRAM Pathfinding & Process Integration Engineer, you will lead early-phase technology investigation and process integration for next-generation DRAM architectures. Found on 1752vc Careers, the job board for startup and VC roles.
What they're looking for
- Master's degree or equivalent experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field
- 5+ years of semiconductor industry experience in process integration, process development, device engineering, or advanced R&D
- Strong understanding of memory technologies including DRAM, NAND, SRAM, and emerging memory architectures
- Extensive knowledge of semiconductor device physics and process integration
- Experience with DOE methodologies, statistical analysis, and technical problem-solving
- Proven track record to influence and collaborate across multidisciplinary engineering teams
More about this role
Our vision is to transform how the world uses information to enrich life for all .
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Join the DRAM Technology Development team at Micron to influence the future of memory technology. Based at the NY CREATES Albany NanoTech Complex, we create breakthrough innovations that drive future DRAM scaling! Our work involves sophisticated patterning, novel materials, new device architectures, and High-NA EUV lithography.
You will work with leading equipment suppliers, research institutions, and Micron’s global development teams to solve difficult semiconductor technology problems and guide the strategic direction of memory technology!
As a DRAM Pathfinding & Process Integration Engineer, you will lead early-phase technology investigation and process integration for next-generation DRAM architectures.
You will define structural, electrical, and manufacturability requirements for future memory technologies and translate these requirements into coordinated process solutions....
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